Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties

dc.creator	Bhagwat S.S.
dc.creator	Bhangale A.R.
dc.creator	Patil J.M.
dc.creator	Shirodkar V.S.
dc.creator	Pinto R.
dc.creator	Apte P.R.
dc.creator	Pai S.P.
dc.date	1999
dc.date.accessioned	2013-05-29T23:04:20Z
dc.date.available	2013-05-29T23:04:20Z
dc.date.issued	2013-05-30
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200020
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=2&spage=388
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/2612
dc.description	Calcium Fluoride buffer lavers were grown on Si < 100 > substrates using the low energy cluster beam deposition technique. The films were annealed at various temperatures ranging between 500oC and 700oC. The SEM studies showed that as-deposited films were well oriented along the c-axis and had very smooth surface morphology. The annealed films on the contarary, showed lowering of peak intensities and roughening of the surface. The dielectric constant derived from the C-V measurements at 1 MHz were 2.01 and 18 for as-deposited and annealed films respectively.
dc.publisher	Sociedade Brasileira de Física
dc.source	Brazilian Journal of Physics
dc.title	Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties

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