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| dc.creator |
Aristone F. |
|
| dc.creator |
Portal J.-C. |
|
| dc.creator |
Palmier J. F. |
|
| dc.creator |
Harmand J. C. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:03:20Z |
|
| dc.date.available |
2013-05-29T23:03:20Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200018 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=2&spage=375 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2606 |
|
| dc.description |
Oscillations in the vertical magneto-transport of a GaInAs-AlInAs superlattice were observed and explained as being the modulation of miniband properties. We explain that such a modulation is due to the Landau levels of the highly (Si) n+ doped regions. It is shown that phase and amplitude of these oscillations are dependent on the angle between electric and magnetic fields. This phenomenon is thus similar to the Shubnikov - de Haas effect in bulk materials, even though the active region of the superlattice is not intentionally doped. Very highly doped three-dimensional regions were grown on each side of the superlattice to allow for the process of Ohmic contact formation. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Shubnikov-de Haas - like oscillations in the vertical transport of semiconductor superlattices |
|
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