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Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors

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dc.creator Freitas Jr.,J.A.
dc.creator Moore W.J.
dc.date 1998
dc.date.accessioned 2013-05-29T22:19:41Z
dc.date.available 2013-05-29T22:19:41Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331998000100002
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1998&volume=28&issue=1&spage=12
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2345
dc.description The wide bandgap semiconductors Silicon carbide and gallium nitride have been studied by Raman scattering, photoluminescense, and infrared absorption. Raman scattering studies determined crystalline quality and polytype of bulk and thin film samples at room temperature to detected and/or identify impurity centers and structure related defects and their role on the electronic properties of the materiais. Infrared absorption spectroscpopy was used to measure the binding enrgy of donors and their concentration.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors


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