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Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength

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dc.creator Furtado M.T.
dc.creator Carvalho Jr. W.
dc.creator Machado A.M.
dc.creator Jomori K.
dc.date 1997
dc.date.accessioned 2013-05-29T22:07:10Z
dc.date.available 2013-05-29T22:07:10Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400005
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1997&volume=27&issue=4&spage=456
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2270
dc.description We present measurements of the differential gain of multiquantum well (MQW) broad area lasers emitting at 1.55<FONT FACE="Symbol">m</font>m wavelength, taking into account the nonuniform stimulated emission caused by filamentation within the optical cavity. The differential gain was determined from measurements of the threshold current density, considering the losses due to the inhomogenous carrier density distribution, as an apparent leakage current effect in the output power-current characteristics. The lasers were grown by low pressure MOCVD and incorporate an InGaAs/InGaAsP/InP separate confinement MQW active region. The results are compared with previous data reported on similar MQW heterostructures.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well Lasers with 1.55 mm Emission Wavelength


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