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InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth

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dc.creator Furtado M.T.
dc.creator Manganote E.J.T.
dc.creator Bordeaux-Rêgo A.C.G.
dc.creator Steinhagen F.
dc.creator Janning H.
dc.creator Burkhard H.
dc.date 1997
dc.date.accessioned 2013-05-29T22:05:10Z
dc.date.available 2013-05-29T22:05:10Z
dc.date.issued 2013-05-30
dc.identifier http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400001
dc.identifier http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1997&volume=27&issue=4&spage=411
dc.identifier.uri http://koha.mediu.edu.my:8181/jspui/handle/123456789/2258
dc.description The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 <FONT FACE="Symbol">m</font>m is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth.
dc.publisher Sociedade Brasileira de Física
dc.source Brazilian Journal of Physics
dc.title InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth


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