| dc.creator |
Amato M. A. |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-05-29T21:24:31Z |
|
| dc.date.available |
2013-05-29T21:24:31Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0102-47442002000400003 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01024744&date=2002&volume=24&issue=4&spage=379 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2015 |
|
| dc.description |
It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Revista Brasileira de Ensino de Física |
|
| dc.title |
Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors |
|