| dc.creator |
Dubois, Mathieu |
|
| dc.creator |
Jiménez, David |
|
| dc.creator |
Andres, P. L. de |
|
| dc.creator |
Roche, Stephan |
|
| dc.date |
2008-01-29T14:17:24Z |
|
| dc.date |
2008-01-29T14:17:24Z |
|
| dc.date |
2007 |
|
| dc.date.accessioned |
2017-01-31T00:59:51Z |
|
| dc.date.available |
2017-01-31T00:59:51Z |
|
| dc.identifier |
Phys. Rev. B 76, 115337 (2007) |
|
| dc.identifier |
http://hdl.handle.net/10261/2760 |
|
| dc.identifier.uri |
http://dspace.mediu.edu.my:8181/xmlui/handle/10261/2760 |
|
| dc.description |
We report on a multiscale approach for the simulation of electrical characteristics of metal disilicide based Schottky-barrier metal oxide semiconductor field-effect transistors (SB-MOSFETs). Atomistic tight-binding method and non-equilibrium Greens function formalism are combined to calculate the propagation of charge carriers in the metal and the charge distribution at the MSi2(111)/Si(111) and MSi2(111)/Si(100) (with M=Ni, Co, and Fe) contacts. Quantum transmission coefficients at the interfaces are then computed accounting for energy and momentum conservation, and are further used as input parameters for a compact model of SB-MOSFET current-voltage simulations. In the quest for nanodevice performance optimization, this approach allows unveiling the role fo different materials in configurations relevant for heterostructure nanowires. |
|
| dc.description |
Financed by CICYT MAT-2005-3866, MEC TEC-2006-13731-C02-01/MIC and EU (contract num. 015783 NODE) |
|
| dc.description |
Peer reviewed |
|
| dc.format |
158427 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
eng |
|
| dc.publisher |
American Physical Society |
|
| dc.rights |
openAccess |
|
| dc.subject |
Ballistic Electron Emission Microscopy |
|
| dc.subject |
MOSFET |
|
| dc.title |
Multiscale modelling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection |
|
| dc.type |
Artículo |
|