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Multiscale modelling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection

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dc.creator Dubois, Mathieu
dc.creator Jiménez, David
dc.creator Andres, P. L. de
dc.creator Roche, Stephan
dc.date 2008-01-29T14:17:24Z
dc.date 2008-01-29T14:17:24Z
dc.date 2007
dc.date.accessioned 2017-01-31T00:59:51Z
dc.date.available 2017-01-31T00:59:51Z
dc.identifier Phys. Rev. B 76, 115337 (2007)
dc.identifier http://hdl.handle.net/10261/2760
dc.identifier.uri http://dspace.mediu.edu.my:8181/xmlui/handle/10261/2760
dc.description We report on a multiscale approach for the simulation of electrical characteristics of metal disilicide based Schottky-barrier metal oxide semiconductor field-effect transistors (SB-MOSFETs). Atomistic tight-binding method and non-equilibrium Greens function formalism are combined to calculate the propagation of charge carriers in the metal and the charge distribution at the MSi2(111)/Si(111) and MSi2(111)/Si(100) (with M=Ni, Co, and Fe) contacts. Quantum transmission coefficients at the interfaces are then computed accounting for energy and momentum conservation, and are further used as input parameters for a compact model of SB-MOSFET current-voltage simulations. In the quest for nanodevice performance optimization, this approach allows unveiling the role fo different materials in configurations relevant for heterostructure nanowires.
dc.description Financed by CICYT MAT-2005-3866, MEC TEC-2006-13731-C02-01/MIC and EU (contract num. 015783 NODE)
dc.description Peer reviewed
dc.format 158427 bytes
dc.format application/pdf
dc.language eng
dc.publisher American Physical Society
dc.rights openAccess
dc.subject Ballistic Electron Emission Microscopy
dc.subject MOSFET
dc.title Multiscale modelling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection
dc.type Artículo


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