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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/7372| Title: | Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits |
| Keywords: | three dimensional integrated circuits bonded copper interconnects bonding fabrication |
| Issue Date: | 9-Oct-2013 |
| Description: | Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measured using the four-point test. The effects of bonding temperature, physical bonding and failure mechanisms were investigated. The surface effects on copper surface due to pre-bond clean (with glacial acetic acid) were also looked into. A maximum average bond toughness of approximately 35 J/m² was obtained bonding temperature 300 C. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/7372 |
| Appears in Collections: | MIT Items |
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