Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/4005
Title: Modeling generalized stacking fault in Au using tight-binding potential combined with a simulated annealing method
Keywords: generalized stacking fault
tight-binding potential
Au
Issue Date: 9-Oct-2013
Description: Tight-binding potential combined with a simulated annealing method is used to study the generalized stacking fault structure and energy of gold. The potential is chosen to fit band structures and total energies from a set of first-principles calculations (Phys. Rev. B54, 4519 (1996)). It is found that the relaxed stacking fault energy (SFE) and anti-SFE are equal to 46 and 102 mJ/m², respectively, and in good agreement with the first principles calculations and experiment. In addition, the potential predicts that the c/a of hcp-like stacking fault structure in Au is slightly smaller than the ideal one.
Singapore-MIT Alliance (SMA)
URI: http://koha.mediu.edu.my:8181/xmlui/handle/1721
Other Identifiers: http://hdl.handle.net/1721.1/4005
Appears in Collections:MIT Items

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