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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3991Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.creator | Teo, L.W. | - |
| dc.creator | Heng, C.L. | - |
| dc.creator | Ho, V. | - |
| dc.creator | Tay, M.S. | - |
| dc.creator | Choi, Wee Kiong | - |
| dc.creator | Chim, Wai Kin | - |
| dc.creator | Antoniadis, Dimitri A. | - |
| dc.creator | Fitzgerald, Eugene A. | - |
| dc.date | 2003-12-22T21:01:21Z | - |
| dc.date | 2003-12-22T21:01:21Z | - |
| dc.date | 2002-01 | - |
| dc.date.accessioned | 2013-10-09T02:33:28Z | - |
| dc.date.available | 2013-10-09T02:33:28Z | - |
| dc.date.issued | 2013-10-09 | - |
| dc.identifier | http://hdl.handle.net/1721.1/3991 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/xmlui/handle/1721 | - |
| dc.description | A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a layer of Ge+SiO₂ of varying thickness (6 - 20 nm) deposited using the radio frequency (r.f.) co-sputtering technique and a SiO₂ cap layer (50nm) deposited using r.f. sputtering, was investigated. It was verified using TEM that germanium nanocrystals of sizes ranging from 6 – 20 nm were successfully fabricated after thermal annealing of the tri-layer structure under suitable conditions. The nanocrystals were found to be well confined by the RTO SiO₂ and the cap SiO₂ under specific annealing conditions. The electrical properties of the tri-layer structure have been characterized using MOS capacitor test devices. A significant hysteresis can be observed from the C-V measurements and this suggests the charge storage capability of the nanocrystals. The proposed technique has the potential for fabricating memory devices with controllable nanocrystals sizes. | - |
| dc.description | Singapore-MIT Alliance (SMA) | - |
| dc.format | 211092 bytes | - |
| dc.format | application/pdf | - |
| dc.language | en_US | - |
| dc.relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); | - |
| dc.subject | germanium nanocrystals | - |
| dc.subject | rapid thermal oxidation | - |
| dc.subject | radio frequency sputtering | - |
| dc.subject | memory devices | - |
| dc.title | Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices | - |
| dc.type | Article | - |
| Appears in Collections: | MIT Items | |
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