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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3989Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.creator | Lee, Minjoo L. | - |
| dc.creator | Leitz, Christopher W. | - |
| dc.creator | Cheng, Zhiyuan | - |
| dc.creator | Antoniadis, Dimitri A. | - |
| dc.creator | Fitzgerald, Eugene A. | - |
| dc.date | 2003-12-22T20:54:25Z | - |
| dc.date | 2003-12-22T20:54:25Z | - |
| dc.date | 2002-01 | - |
| dc.date.accessioned | 2013-10-09T02:33:28Z | - |
| dc.date.available | 2013-10-09T02:33:28Z | - |
| dc.date.issued | 2013-10-09 | - |
| dc.identifier | http://hdl.handle.net/1721.1/3989 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/xmlui/handle/1721 | - |
| dc.description | We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ .â Geâ .â virtual substrates. The poor interface between silicon dioxide (SiOâ ) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400° C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly 8 times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cm²/V-s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement mode MOSFET with buried channel-like transport characteristics. | - |
| dc.description | Singapore-MIT Alliance (SMA) | - |
| dc.format | 40541 bytes | - |
| dc.format | application/pdf | - |
| dc.language | en_US | - |
| dc.relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); | - |
| dc.subject | strained-Ge | - |
| dc.subject | SiGe | - |
| dc.subject | germanium | - |
| dc.subject | MOSFET | - |
| dc.subject | mobility | - |
| dc.subject | strained-Si | - |
| dc.subject | pMOSFET | - |
| dc.title | Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Siâ â xGex/Si virtual substrates | - |
| dc.type | Article | - |
| Appears in Collections: | MIT Items | |
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