Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3989| Title: | Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Siâ â xGex/Si virtual substrates |
| Keywords: | strained-Ge SiGe germanium MOSFET mobility strained-Si pMOSFET |
| Issue Date: | 9-Oct-2013 |
| Description: | We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ .â Geâ .â virtual substrates. The poor interface between silicon dioxide (SiOâ ) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400° C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly 8 times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cm²/V-s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement mode MOSFET with buried channel-like transport characteristics. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3989 |
| Appears in Collections: | MIT Items |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.