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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3986Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.creator | Cheng, Zhiyuan | - |
| dc.creator | Fitzgerald, Eugene A. | - |
| dc.creator | Antoniadis, Dimitri A. | - |
| dc.date | 2003-12-22T20:48:14Z | - |
| dc.date | 2003-12-22T20:48:14Z | - |
| dc.date | 2002-01 | - |
| dc.date.accessioned | 2013-10-09T02:33:27Z | - |
| dc.date.available | 2013-10-09T02:33:27Z | - |
| dc.date.issued | 2013-10-09 | - |
| dc.identifier | http://hdl.handle.net/1721.1/3986 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/xmlui/handle/1721 | - |
| dc.description | In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing hydrogen implantation. Etch-back approach produces SGOI substrate with less defects in SiGe film, but the SiGe film uniformity is inferior. "Smart-cut" approach has better control on the SiGe film thickness and uniformity, and is applicable to wider Ge content range of the SiGe film. We have also fabricated strained-Si n-MOSFET’s on SGOI substrates, in which epitaxial regrowth was used to produce the surface strained Si layer on relaxed SGOI substrate, followed by large-area n-MOSFET’s fabrication on this structure. The measured electron mobility shows significant enhancement (1.7 times) over both the universal mobility and that of co-processed bulk-Si MOSFET’s. This SGOI process has a low thermal budget and thus is compatible with a wide range of Ge contents in Si₁₋xGex layer. | - |
| dc.description | Singapore-MIT Alliance (SMA) | - |
| dc.format | 105803 bytes | - |
| dc.format | application/pdf | - |
| dc.language | en_US | - |
| dc.relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); | - |
| dc.subject | strained-Si | - |
| dc.subject | SiGe | - |
| dc.subject | SiGe-on-Insulator | - |
| dc.subject | SGOI | - |
| dc.subject | SOI | - |
| dc.subject | MOSFET | - |
| dc.subject | mobility | - |
| dc.subject | bonding | - |
| dc.subject | etch-back | - |
| dc.subject | etch-stop | - |
| dc.subject | smart-cut | - |
| dc.subject | hydrogen implantation | - |
| dc.title | SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication | - |
| dc.type | Article | - |
| Appears in Collections: | MIT Items | |
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