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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3986| Title: | SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication |
| Keywords: | strained-Si SiGe SiGe-on-Insulator SGOI SOI MOSFET mobility bonding etch-back etch-stop smart-cut hydrogen implantation |
| Issue Date: | 9-Oct-2013 |
| Description: | In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing hydrogen implantation. Etch-back approach produces SGOI substrate with less defects in SiGe film, but the SiGe film uniformity is inferior. "Smart-cut" approach has better control on the SiGe film thickness and uniformity, and is applicable to wider Ge content range of the SiGe film. We have also fabricated strained-Si n-MOSFET’s on SGOI substrates, in which epitaxial regrowth was used to produce the surface strained Si layer on relaxed SGOI substrate, followed by large-area n-MOSFET’s fabrication on this structure. The measured electron mobility shows significant enhancement (1.7 times) over both the universal mobility and that of co-processed bulk-Si MOSFET’s. This SGOI process has a low thermal budget and thus is compatible with a wide range of Ge contents in Si₁₋xGex layer. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3986 |
| Appears in Collections: | MIT Items |
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