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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3985| Title: | SiGeC Near Infrared Photodetectors |
| Keywords: | photodetector quantum efficiency absorption coefficient absorption efficiency band gap lattice constant critical thickness SiGeC semiconductor alloy |
| Issue Date: | 9-Oct-2013 |
| Description: | A near infrared waveguide photodetector in Si-based ternary Si₁â xâ yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. The active absorption layer has a thickness of 120~450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 µm. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3985 |
| Appears in Collections: | MIT Items |
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