SiGeC Near Infrared Photodetectors

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3985

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DC Field	Value	Language
dc.creator	Li, Baojun	-
dc.creator	Chua, Soo-Jin	-
dc.creator	Fitzgerald, Eugene A.	-
dc.creator	Leitz, Christopher W.	-
dc.creator	Miao, Lingyun	-
dc.date	2003-12-22T20:46:31Z	-
dc.date	2003-12-22T20:46:31Z	-
dc.date	2002-01	-
dc.date.accessioned	2013-10-09T02:33:27Z	-
dc.date.available	2013-10-09T02:33:27Z	-
dc.date.issued	2013-10-09	-
dc.identifier	http://hdl.handle.net/1721.1/3985	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721	-
dc.description	A near infrared waveguide photodetector in Si-based ternary Si₁â xâ yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. The active absorption layer has a thickness of 120~450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 µm.	-
dc.description	Singapore-MIT Alliance (SMA)	-
dc.format	484917 bytes	-
dc.format	application/pdf	-
dc.language	en_US	-
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);	-
dc.subject	photodetector	-
dc.subject	quantum efficiency	-
dc.subject	absorption coefficient	-
dc.subject	absorption efficiency	-
dc.subject	band gap	-
dc.subject	lattice constant	-
dc.subject	critical thickness	-
dc.subject	SiGeC	-
dc.subject	semiconductor	-
dc.subject	alloy	-
dc.title	SiGeC Near Infrared Photodetectors	-
dc.type	Article	-
Appears in Collections:	MIT Items

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