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Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3978
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dc.creatorFonstad, Clifton G. Jr.-
dc.date2003-12-20T19:43:44Z-
dc.date2003-12-20T19:43:44Z-
dc.date2002-01-
dc.date.accessioned2013-10-09T02:33:23Z-
dc.date.available2013-10-09T02:33:23Z-
dc.date.issued2013-10-09-
dc.identifierhttp://hdl.handle.net/1721.1/3978-
dc.identifier.urihttp://koha.mediu.edu.my:8181/xmlui/handle/1721-
dc.descriptionThis paper presents a new technique for the monolithic heterogeneous integration of compound semiconductor devices with silicon integrated circuits, and establishes the theoretical foundation for a key element of the process, tailored magnetic attraction and retention. It is shown how a patterned thin film of hard magnetic material can be used to engineer the attraction between the film and nanopills covered with a soft magnetic material. With a suitable choice of pattern, it is anticipated that it will be possible to achieve complete filling of recesses in the surface of fully-processed integrated circuit wafers, preparatory to subsequent processing to fabricate the nanopills into heterostructure devices integrated monolithically with the pre-existing electronics.-
dc.descriptionSingapore-MIT Alliance (SMA)-
dc.format96834 bytes-
dc.formatapplication/pdf-
dc.languageen_US-
dc.relationAdvanced Materials for Micro- and Nano-Systems (AMMNS);-
dc.subjectoptoelectronics-
dc.subjectheterogeneous integration-
dc.subjectself assembly-
dc.subjectVCSELs-
dc.subjectIII-V heterostructures-
dc.titleMagnetically-Assisted Statistical Assembly - a new heterogeneous integration technique-
dc.typeArticle-
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