Atomistic Simulations of Metallic Cluster Coalescence

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3968

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DC Field	Value	Language
dc.creator	Takahashi, A. R.	-
dc.creator	Thompson, Carl V.	-
dc.creator	Carter, W. Craig	-
dc.date	2003-12-20T19:00:27Z	-
dc.date	2003-12-20T19:00:27Z	-
dc.date	2002-01	-
dc.date.accessioned	2013-10-09T02:33:20Z	-
dc.date.available	2013-10-09T02:33:20Z	-
dc.date.issued	2013-10-09	-
dc.identifier	http://hdl.handle.net/1721.1/3968	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721	-
dc.description	A new computational method is introduced to investigate the stresses developed in the island-coalescence stage of polycrystalline film formation during deposition. The method uses molecular dynamics to examine the behavior of clusters of atoms both in free space and on substrates. Continuum treatments used in previous models may not be applicable at small length scales or low dimensionality. In atomistic simulations, the effects of surface diffusion, bond straining and defect formation can be directly studied. TEM experiments will be used to evaluate the validity of the simulation model.	-
dc.description	Singapore-MIT Alliance (SMA)	-
dc.format	43588 bytes	-
dc.format	application/pdf	-
dc.language	en_US	-
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);	-
dc.subject	modeling	-
dc.subject	simulation	-
dc.subject	stress	-
dc.subject	thin films	-
dc.title	Atomistic Simulations of Metallic Cluster Coalescence	-
dc.type	Article	-
Appears in Collections:	MIT Items

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