Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3963| Title: | RM³ Processing for In-plane Optical Interconnects on Si-CMOS and the Impact of Topographic Features on Losses in Deposited Dielectric Waveguides |
| Keywords: | optoelectronic integration heterogeneous integration hybrid assembly in-plane laser diodes rectangular dielectric waveguides |
| Issue Date: | 9-Oct-2013 |
| Description: | This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the applicability of RM³ integration to in-plane geometries for on-chip optical clock and signal distribution and on the suitability of commercially processed IC wafers for use as substrates for rectangular dielectric waveguides. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3963 |
| Appears in Collections: | MIT Items |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
