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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3906| Title: | InGaAsN/GaAs Quantum-well Laser Diodes |
| Keywords: | InGaAsN/GaAs quantum well molecular beam epitaxy laser diode |
| Issue Date: | 9-Oct-2013 |
| Description: | GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3906 |
| Appears in Collections: | MIT Items |
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