InGaAsN/GaAs Quantum-well Laser Diodes

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3906

Full metadata record

DC Field	Value	Language
dc.creator	Wang, S.Z.	-
dc.creator	Yoon, Soon Fatt	-
dc.date	2003-12-14T23:48:01Z	-
dc.date	2003-12-14T23:48:01Z	-
dc.date	2004-01	-
dc.date.accessioned	2013-10-09T02:33:09Z	-
dc.date.available	2013-10-09T02:33:09Z	-
dc.date.issued	2013-10-09	-
dc.identifier	http://hdl.handle.net/1721.1/3906	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721	-
dc.description	GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented.	-
dc.description	Singapore-MIT Alliance (SMA)	-
dc.format	293743 bytes	-
dc.format	application/pdf	-
dc.language	en_US	-
dc.relation	Innovation in Manufacturing Systems and Technology (IMST);	-
dc.subject	InGaAsN/GaAs	-
dc.subject	quantum well	-
dc.subject	molecular beam epitaxy	-
dc.subject	laser diode	-
dc.title	InGaAsN/GaAs Quantum-well Laser Diodes	-
dc.type	Article	-
Appears in Collections:	MIT Items

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