Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3901
Title: Characterization and Modeling of Chemical-Mechanical Polishing for Polysilicon Microstructures
Keywords: chemical-mechanical polishing
polysilicon
MEMS
CMP
planarization
Issue Date: 9-Oct-2013
Description: Long the dominant method of wafer planarization in the integrated circuit (IC) industry, chemical-mechanical polishing is starting to play an important role in microelectromechnical systems (MEMS). We present an experiment to characterize a polysilicon CMP process with the specific goal of examining MEMS sized test structures. We utilize previously discussed models and examine whether the same assumptions from IC CMP can be made for MEMS CMP. We find that CMP at the MEMS scale is not just pattern density dependent, but also partly dependent on feature size. Also, we find that new layout designs relevant to MEMS can negatively impact how well existing CMP models simulate polishing, motivating the need for further model development.
Singapore-MIT Alliance (SMA)
URI: http://koha.mediu.edu.my:8181/xmlui/handle/1721
Other Identifiers: http://hdl.handle.net/1721.1/3901
Appears in Collections:MIT Items

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