Micro Raman Spectroscopy of Annealed Erbium Implanted GaN

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3834

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DC Field	Value	Language
dc.creator	Vajpeyi, Agam P.	-
dc.creator	Chua, Soo-Jin	-
dc.creator	Fitzgerald, Eugene A.	-
dc.creator	Tripathy, S.	-
dc.date	2003-12-13T17:22:54Z	-
dc.date	2003-12-13T17:22:54Z	-
dc.date	2004-01	-
dc.date.accessioned	2013-10-09T02:32:44Z	-
dc.date.available	2013-10-09T02:32:44Z	-
dc.date.issued	2013-10-09	-
dc.identifier	http://hdl.handle.net/1721.1/3834	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721	-
dc.description	Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 5×10¹⁵ cm⁻². The implanted samples were annealed in nitrogen atmosphere at different temperatures to facilitate recovery from implantation related damage. In this paper we report the annealing behavior of Erbium implanted GaN by using micro Raman spectroscopy and optimized annealing condition. We have observed almost full damage recovery of the crystalline quality of Er implanted GaN after annealing at 1000°C for 2 minute. This observation is further confirmed by using AFM images.	-
dc.description	Singapore-MIT Alliance (SMA)	-
dc.format	282979 bytes	-
dc.format	application/pdf	-
dc.language	en_US	-
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);	-
dc.subject	annealing	-
dc.subject	damage recovery	-
dc.subject	Erbium implantation	-
dc.subject	Raman spectroscopy	-
dc.title	Micro Raman Spectroscopy of Annealed Erbium Implanted GaN	-
dc.type	Article	-
Appears in Collections:	MIT Items

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