High hole and electron mobilities using Strained Si/Strained Ge heterostructures

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3830

Full metadata record

DC Field	Value	Language
dc.creator	Gupta, Saurabh	-
dc.creator	Lee, Minjoo L.	-
dc.creator	Leitz, Christopher W.	-
dc.creator	Fitzgerald, Eugene A.	-
dc.date	2003-12-13T16:54:41Z	-
dc.date	2003-12-13T16:54:41Z	-
dc.date	2004-01	-
dc.date.accessioned	2013-10-09T02:32:39Z	-
dc.date.available	2013-10-09T02:32:39Z	-
dc.date.issued	2013-10-09	-
dc.identifier	http://hdl.handle.net/1721.1/3830	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721	-
dc.description	PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements.	-
dc.description	Singapore-MIT Alliance (SMA)	-
dc.format	308344 bytes	-
dc.format	application/pdf	-
dc.language	en_US	-
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);	-
dc.subject	strained-Ge	-
dc.subject	SiGe	-
dc.subject	germanium	-
dc.subject	MOSFET	-
dc.subject	mobility	-
dc.subject	strained-Si	-
dc.subject	pMOSFET	-
dc.subject	nMOSFET	-
dc.subject	germanium-diffusion	-
dc.title	High hole and electron mobilities using Strained Si/Strained Ge heterostructures	-
dc.type	Article	-
Appears in Collections:	MIT Items

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