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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3830| Title: | High hole and electron mobilities using Strained Si/Strained Ge heterostructures |
| Keywords: | strained-Ge SiGe germanium MOSFET mobility strained-Si pMOSFET nMOSFET germanium-diffusion |
| Issue Date: | 9-Oct-2013 |
| Description: | PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3830 |
| Appears in Collections: | MIT Items |
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