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Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3730
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dc.creatorGan, C.L.-
dc.creatorThompson, Carl V.-
dc.creatorPey, Kin Leong-
dc.creatorChoi, Wee Kiong-
dc.date2003-11-29T19:49:07Z-
dc.date2003-11-29T19:49:07Z-
dc.date2003-01-
dc.date.accessioned2013-10-09T02:32:14Z-
dc.date.available2013-10-09T02:32:14Z-
dc.date.issued2013-10-09-
dc.identifierhttp://hdl.handle.net/1721.1/3730-
dc.identifier.urihttp://koha.mediu.edu.my:8181/xmlui/handle/1721-
dc.descriptionElectromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based interconnects, the reliability of a segment in a Cu-based interconnect tree strongly depends on the stress conditions of connected segments. The analytic model based on a nodal analysis developed for Al trees gives a conservative estimate of the lifetime of Cu-based interconnect trees. However, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are attributed to the variations in the architectural schemes of the two metallization systems. The absence of a conducting electromigration-resistant overlayer in Cu technology and the low critical stress for void nucleation at the Cu/inter-level diffusion barrier (i.e. Si₃N₄) interface leads to different failure modes between Cu and Al interconnects. As a result, the most highly stressed segment in a Cu-based interconnect tree is not always the least reliable. Moreover, the possibility of liner rupture at stressed dual-damascene vias leads to significant differences in tree reliabilities in Cu compared to Al. While an interconnect tree can be treated as a fundamental unit whose reliability is independent of that of other units in Al-based interconnect architectures, interconnect trees can not be treated as fundamental units for circuit-level reliability analyses for Cu-based interconnects.-
dc.descriptionSingapore-MIT Alliance (SMA)-
dc.format180049 bytes-
dc.formatapplication/pdf-
dc.languageen_US-
dc.relationAdvanced Materials for Micro- and Nano-Systems (AMMNS);-
dc.subjectcopper dual-damascene interconnect trees-
dc.subjectelectromigration-
dc.subjectvia-to-via-
dc.subjectdotted-I interconnect trees-
dc.subjectlevels of metallization-
dc.titleReliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees-
dc.typeArticle-
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