Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3727
Title: Observation of Joule Heating-Assisted Electromigration Failure Mechanisms for Dual Damascene Cu/SiO₂ Interconnects
Keywords: electromigration
Joule heating
failure mechanism
Issue Date: 9-Oct-2013
Description: Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with â melt patch’ or â crater’ are common for test structures in the top metal layer, though the occurrence of such failure modes probably depends on the passivation layer thickness. Interconnects that were EM stressed for a short time and then stressed with increasing current to induce Joule heating in the line had similar failure sites to lines that were stressed to failure under standard EM conditions. This shows that some failure mechanisms during EM could be assisted by Joule heating effect.
Singapore-MIT Alliance (SMA)
URI: http://koha.mediu.edu.my:8181/xmlui/handle/1721
Other Identifiers: http://hdl.handle.net/1721.1/3727
Appears in Collections:MIT Items

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.