MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3726

Full metadata record

DC Field	Value	Language
dc.creator	Fitzgerald, Eugene A.	-
dc.creator	Lee, Minjoo L.	-
dc.creator	Leitz, Christopher W.	-
dc.creator	Antoniadis, Dimitri A.	-
dc.date	2003-11-24T21:01:53Z	-
dc.date	2003-11-24T21:01:53Z	-
dc.date	2003-01	-
dc.date.accessioned	2013-10-09T02:32:12Z	-
dc.date.available	2013-10-09T02:32:12Z	-
dc.date.issued	2013-10-09	-
dc.identifier	http://hdl.handle.net/1721.1/3726	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721	-
dc.description	Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital alloy heterostructures. By optimizing growth conditions and understanding the physics of hole and electron transport in these devices, we have fabricated nearly symmetric mobility p- and n-MOSFETs on a common Si₀.₅Ge₀.₅ virtual substrate.	-
dc.description	Singapore-MIT Alliance (SMA)	-
dc.format	460990 bytes	-
dc.format	application/pdf	-
dc.language	en_US	-
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);	-
dc.subject	SiGe	-
dc.subject	strained silicon	-
dc.subject	germanium	-
dc.subject	MOSFETs	-
dc.subject	hole mobility	-
dc.title	MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels	-
dc.type	Article	-
Appears in Collections:	MIT Items

Files in This Item:

There are no files associated with this item.

DSpace JSPUI