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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3724| Title: | The interfacial reaction of Ni on (100) Si₁â xGex (x=0, 0.25) and (111) Ge |
| Keywords: | Ni-germanosilicide in situ annealing |
| Issue Date: | 9-Oct-2013 |
| Description: | The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁â xGex)₂, Ni(Si₁â yGey), and Si₁â zGez (z>y>x) was formed; whereas only Ni₃(Si₁â xGex)₂ and Ni(Si₁â yGey>) were observed by in situ annealing. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3724 |
| Appears in Collections: | MIT Items |
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