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Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3724
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dc.creatorJin, Lijuan-
dc.creatorPey, Kin Leong-
dc.creatorChoi, Wee Kiong-
dc.creatorFitzgerald, Eugene A.-
dc.creatorAntoniadis, Dimitri A.-
dc.creatorPitera, Arthur J.-
dc.creatorLee, Minjoo L.-
dc.creatorChi, D.Z.-
dc.date2003-11-24T20:54:41Z-
dc.date2003-11-24T20:54:41Z-
dc.date2003-01-
dc.date.accessioned2013-10-09T02:32:11Z-
dc.date.available2013-10-09T02:32:11Z-
dc.date.issued2013-10-09-
dc.identifierhttp://hdl.handle.net/1721.1/3724-
dc.identifier.urihttp://koha.mediu.edu.my:8181/xmlui/handle/1721-
dc.descriptionThe interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁â xGex)₂, Ni(Si₁â yGey), and Si₁â zGez (z>y>x) was formed; whereas only Ni₃(Si₁â xGex)₂ and Ni(Si₁â yGey>) were observed by in situ annealing.-
dc.descriptionSingapore-MIT Alliance (SMA)-
dc.format1386604 bytes-
dc.formatapplication/pdf-
dc.languageen_US-
dc.relationAdvanced Materials for Micro- and Nano-Systems (AMMNS);-
dc.subjectNi-germanosilicide-
dc.subjectin situ annealing-
dc.titleThe interfacial reaction of Ni on (100) Si₁â xGex (x=0, 0.25) and (111) Ge-
dc.typeArticle-
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