Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3722| Title: | Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications |
| Keywords: | germanium nanocrystal silicon-germanium oxidation |
| Issue Date: | 9-Oct-2013 |
| Description: | In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing SiO₂ forming a Ge-rich polycrystalline layer. As for wet oxidation, Ge was incorporated into the oxide, forming a layer of mixed oxide, SixGe₁â xOy. Formation of nanocrystalline Ge was observed when the layer of SixGe₁â xOy was annealed in a N₂ ambient. We have fabricated a metal-insulator-semiconductor structure with nanocrystalline Ge embedded within the insulator layer to study its feasibility as a memory device. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3722 |
| Appears in Collections: | MIT Items |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.