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Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3722
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dc.creatorKan, Eric Win Hong-
dc.creatorLeoy, C.C.-
dc.creatorChoi, Wee Kiong-
dc.creatorChim, Wai Kin-
dc.creatorAntoniadis, Dimitri A.-
dc.creatorFitzgerald, Eugene A.-
dc.date2003-11-24T20:46:06Z-
dc.date2003-11-24T20:46:06Z-
dc.date2003-01-
dc.date.accessioned2013-10-09T02:32:11Z-
dc.date.available2013-10-09T02:32:11Z-
dc.date.issued2013-10-09-
dc.identifierhttp://hdl.handle.net/1721.1/3722-
dc.identifier.urihttp://koha.mediu.edu.my:8181/xmlui/handle/1721-
dc.descriptionIn this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing SiO₂ forming a Ge-rich polycrystalline layer. As for wet oxidation, Ge was incorporated into the oxide, forming a layer of mixed oxide, SixGe₁â xOy. Formation of nanocrystalline Ge was observed when the layer of SixGe₁â xOy was annealed in a N₂ ambient. We have fabricated a metal-insulator-semiconductor structure with nanocrystalline Ge embedded within the insulator layer to study its feasibility as a memory device.-
dc.descriptionSingapore-MIT Alliance (SMA)-
dc.format497248 bytes-
dc.formatapplication/pdf-
dc.languageen_US-
dc.relationAdvanced Materials for Micro- and Nano-Systems (AMMNS);-
dc.subjectgermanium nanocrystal-
dc.subjectsilicon-germanium-
dc.subjectoxidation-
dc.titleFormation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications-
dc.typeArticle-
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