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Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3671
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dc.creatorCheng, Zhiyuan-
dc.creatorJung, Jongwan-
dc.creatorLee, Minjoo L.-
dc.creatorNayfeh, Hasan-
dc.creatorPitera, Arthur J.-
dc.creatorHoyt, Judy L.-
dc.creatorFitzgerald, Eugene A.-
dc.creatorAntoniadis, Dimitri A.-
dc.date2003-11-16T17:51:20Z-
dc.date2003-11-16T17:51:20Z-
dc.date2003-01-
dc.date.accessioned2013-10-09T02:31:53Z-
dc.date.available2013-10-09T02:31:53Z-
dc.date.issued2013-10-09-
dc.identifierhttp://hdl.handle.net/1721.1/3671-
dc.identifier.urihttp://koha.mediu.edu.my:8181/xmlui/handle/1721-
dc.descriptionTwo SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities.-
dc.descriptionSingapore-MIT Alliance (SMA)-
dc.format432824 bytes-
dc.formatapplication/pdf-
dc.languageen_US-
dc.relationAdvanced Materials for Micro- and Nano-Systems (AMMNS);-
dc.subjectstrained-Si-
dc.subjectSiGe-
dc.subjectSiGe-on-Insulator-
dc.subjectSGOI-
dc.subjectstrained-Si on SGOI-
dc.subjectSSOI-
dc.subjectSOI-
dc.subjectdual-channel-
dc.subjectsurface channel-
dc.subjectMOSFET-
dc.subjectmobility-
dc.subjectbonding-
dc.subjectetch-back-
dc.titleSiGe-On-Insulator (SGOI): Two Structures for CMOS Application-
dc.typeArticle-
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