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http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3671| Title: | SiGe-On-Insulator (SGOI): Two Structures for CMOS Application |
| Keywords: | strained-Si SiGe SiGe-on-Insulator SGOI strained-Si on SGOI SSOI SOI dual-channel surface channel MOSFET mobility bonding etch-back |
| Issue Date: | 9-Oct-2013 |
| Description: | Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities. Singapore-MIT Alliance (SMA) |
| URI: | http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
| Other Identifiers: | http://hdl.handle.net/1721.1/3671 |
| Appears in Collections: | MIT Items |
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