GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3664

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DC Field	Value	Language
dc.creator	Wang, Yadong	-
dc.creator	Sander, Melissa	-
dc.creator	Peng, Chen	-
dc.creator	Chua, Soo-Jin	-
dc.creator	Fonstad, Clifton G. Jr.	-
dc.date	2003-11-10T19:42:55Z	-
dc.date	2003-11-10T19:42:55Z	-
dc.date	2003-01	-
dc.date.accessioned	2013-10-09T02:31:52Z	-
dc.date.available	2013-10-09T02:31:52Z	-
dc.date.issued	2013-10-09	-
dc.identifier	http://hdl.handle.net/1721.1/3664	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721	-
dc.description	A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication.	-
dc.description	Singapore-MIT Alliance (SMA)	-
dc.format	683180 bytes	-
dc.format	application/pdf	-
dc.language	en_US	-
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);	-
dc.subject	GaN-based nanomaterials fabrication	-
dc.subject	template synthesis	-
dc.subject	anodic porous alumina	-
dc.subject	AAO template	-
dc.subject	nitride nanowire arrays	-
dc.subject	anodic aluminium oxide template	-
dc.title	GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD	-
dc.type	Article	-
Appears in Collections:	MIT Items

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