Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/3658
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dc.creatorLiew, K.P.-
dc.creatorLi, Yi-
dc.creatorYeadon, Mark-
dc.creatorBernstein, R.-
dc.creatorThompson, Carl V.-
dc.date2003-11-10T19:18:00Z-
dc.date2003-11-10T19:18:00Z-
dc.date2003-01-
dc.date.accessioned2013-10-09T02:31:49Z-
dc.date.available2013-10-09T02:31:49Z-
dc.date.issued2013-10-09-
dc.identifierhttp://hdl.handle.net/1721.1/3658-
dc.identifier.urihttp://koha.mediu.edu.my:8181/xmlui/handle/1721-
dc.descriptionAn curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each stage of the silicide growth. When the nickel films were subjected to long-time isothermal annealing, stresses that developed during silicide formation gradually relaxed. Fitting the experimental results with a kinetic model provides insight into the volumetric strain and relaxation behavior of the reacting film and the reaction product.-
dc.descriptionSingapore-MIT Alliance (SMA)-
dc.format379507 bytes-
dc.formatapplication/pdf-
dc.languageen_US-
dc.relationAdvanced Materials for Micro- and Nano-Systems (AMMNS);-
dc.subjectnickel silicide-
dc.subjectstress evolution-
dc.subjectCoble creep-
dc.titleCharacterization and Modeling of Stress Evolution During Nickel Silicides Formation-
dc.typeArticle-
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