Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 2: SF6 / O2

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/4113

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DC Field	Value	Language
dc.creator	Bauerfeldt G. F.	-
dc.creator	Arbilla G.	-
dc.date	1998	-
dc.date.accessioned	2013-05-30T10:38:39Z	-
dc.date.available	2013-05-30T10:38:39Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0100-40421998000100006	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01004042&date=1998&volume=21&issue=1&spage=34	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/4113	-
dc.description	In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes and the effect of the parameters' uncertainties were determined. The model was compared with experimental data for the plasma etching of silicon and with the calculated results for the CF4 / O2 system. In both systems the main etching agent is the fluorine atom and the concentration of the major species depends on the composition of the mixture. The etching rate is greater for SF6 / O2.	-
dc.publisher	Sociedade Brasileira de Química	-
dc.source	Química Nova	-
dc.subject	plasma etching	-
dc.subject	numerical modeling	-
dc.subject	SF6 decomposition	-
dc.title	Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 2: SF6 / O2	-
Appears in Collections:	Chemistry

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