Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3030
Title: Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices
Issue Date: 30-May-2013
Publisher: Sociedade Brasileira de Física
Description: Metal - glass metal, MGM, thin film devices are prepared using vacuum deposition of Sb2Pb1Se7 compound. The capacitance and the loss tangent variation as a function of temperature and frequency is studied. The observed characteristics are explained using small signal ac circuit analysis. It is shown that the theoretical curve generated using the ac circuit analysis gives excellent fitting with the experimental curve.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/3030
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300012
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2000&volume=30&issue=3&spage=554
Appears in Collections:Physics and Astronomy

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