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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/2787| Title: | Plasma ion implantation of nitrogen into silicon: high resolution x-ray diffraction |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | In the present study we use x-ray diffraction methods to characterize the surface of Si wafers irradiated with nitrogen by Plasma Immersion Ion Implantation. This is a non-line-of-sight ion implantation method, which allows three-dimensional treatment of materials including semiconductors, metals and dielectrics. The atomic concentration profiles in the implanted Si wafers were measured by Auger electron spectroscopy. The (004) Si rocking curve ( omega-scan) was measured in a high resolution x-ray diffractometer equipped with a Ge (220) four-crystal monochromator before and after implantation. A distortion of the Si (004)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was successfully simulated by dynamical theory of x-ray diffraction, assuming a Gaussian strain profile through the implanted region. The analysis made by x-ray difraction and Auger electron spectroscopy revealed successful implantation of ions with ac- cumulated nitrogen dose of 1.5 x <FONT FACE=Symbol>10(17) </FONT>cm-3 .The Si wafers can be used as high sensitivity monitors in the Plasma Immersion Ion Implantation process, especially at the low dose range. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/2787 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400032 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=4&spage=768 |
| Appears in Collections: | Physics and Astronomy |
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