Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/10261/2815
Title: Giant growth rate in nano-oxidation of p-silicon surfaces by using ethyl alcohol liquid bridges
Keywords: Oxidation
Organic Compounds
Nanolithography
Atomic Force Microscopy
Water
Silicon
Elemental Semiconductors
Publisher: American Institute of Physics
Description: We demonstrate that local oxidation nanolithography can be performed in liquid environments different from aqueous solutions with a significant improvement in the aspect ratio of the fabricated motives. Here, we perform a comparative study of noncontact atomic force microscopy oxidation experiments in water and ethyl alcohol. The growth rate of local oxides can be increased by almost an order of magnitude by using oxyanions from ethyl alcohol molecules. We propose that the enhanced growth rate is a consequence of the reduction of the trapped charges within the growing oxide. The present results open the possibility of using local oxidation nanolithography to directly fabricate vertical oxide structures while keeping lateral sizes in the nanometer range.
This work was supported by the European Commission (MONA-LISA, G5RD-2000-00349).
Peer reviewed
URI: http://dspace.mediu.edu.my:8181/xmlui/handle/10261/2815
Other Identifiers: Applied Physics Letters 83, 12: 2339-2341 (2003)
0003-6951
http://hdl.handle.net/10261/2815
10.1063/1.1613799
Appears in Collections:Digital Csic

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