Multiscale modelling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/10261/2760

Title:	Multiscale modelling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection
Keywords:	Ballistic Electron Emission Microscopy MOSFET
Publisher:	American Physical Society
Description:	We report on a multiscale approach for the simulation of electrical characteristics of metal disilicide based Schottky-barrier metal oxide semiconductor field-effect transistors (SB-MOSFETs). Atomistic tight-binding method and non-equilibrium Greens function formalism are combined to calculate the propagation of charge carriers in the metal and the charge distribution at the MSi2(111)/Si(111) and MSi2(111)/Si(100) (with M=Ni, Co, and Fe) contacts. Quantum transmission coefficients at the interfaces are then computed accounting for energy and momentum conservation, and are further used as input parameters for a compact model of SB-MOSFET current-voltage simulations. In the quest for nanodevice performance optimization, this approach allows unveiling the role fo different materials in configurations relevant for heterostructure nanowires. Financed by CICYT MAT-2005-3866, MEC TEC-2006-13731-C02-01/MIC and EU (contract num. 015783 NODE) Peer reviewed
URI:	http://dspace.mediu.edu.my:8181/xmlui/handle/10261/2760
Other Identifiers:	Phys. Rev. B 76, 115337 (2007) http://hdl.handle.net/10261/2760
Appears in Collections:	Digital Csic

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