Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/10261/2760
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dc.creatorDubois, Mathieu-
dc.creatorJiménez, David-
dc.creatorAndres, P. L. de-
dc.creatorRoche, Stephan-
dc.date2008-01-29T14:17:24Z-
dc.date2008-01-29T14:17:24Z-
dc.date2007-
dc.date.accessioned2017-01-31T00:59:51Z-
dc.date.available2017-01-31T00:59:51Z-
dc.identifierPhys. Rev. B 76, 115337 (2007)-
dc.identifierhttp://hdl.handle.net/10261/2760-
dc.identifier.urihttp://dspace.mediu.edu.my:8181/xmlui/handle/10261/2760-
dc.descriptionWe report on a multiscale approach for the simulation of electrical characteristics of metal disilicide based Schottky-barrier metal oxide semiconductor field-effect transistors (SB-MOSFETs). Atomistic tight-binding method and non-equilibrium Greens function formalism are combined to calculate the propagation of charge carriers in the metal and the charge distribution at the MSi2(111)/Si(111) and MSi2(111)/Si(100) (with M=Ni, Co, and Fe) contacts. Quantum transmission coefficients at the interfaces are then computed accounting for energy and momentum conservation, and are further used as input parameters for a compact model of SB-MOSFET current-voltage simulations. In the quest for nanodevice performance optimization, this approach allows unveiling the role fo different materials in configurations relevant for heterostructure nanowires.-
dc.descriptionFinanced by CICYT MAT-2005-3866, MEC TEC-2006-13731-C02-01/MIC and EU (contract num. 015783 NODE)-
dc.descriptionPeer reviewed-
dc.format158427 bytes-
dc.formatapplication/pdf-
dc.languageeng-
dc.publisherAmerican Physical Society-
dc.rightsopenAccess-
dc.subjectBallistic Electron Emission Microscopy-
dc.subjectMOSFET-
dc.titleMultiscale modelling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection-
dc.typeArtículo-
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